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| Brand Name: | Infineon |
| Model Number: | FF50R12RT4 |
| MOQ: | 1 set |
| Payment Terms: | T/T |
| Supply Ability: | 1000sets |
Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
Electrical Features
• Extended Operation Temperature Tvj op
• Low Switching Losses
• Low VCEsat
• Tvj op = 150°C
• VCEsat with positive Temperature Coefficient
Mechanical Features
• Isolated Base Plate
• Standard Housing
IGBT,Inverter
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V |
| Continuous DC collector current | TC = 100°C, Tvj max = 175°C | IC nom | 50 | A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 100 | A |
| Total power dissipation | TC = 25°C, Tvj max = 175°C | Ptot | 285 | W |
| Gate-emitter peak voltage | VGES | +/-20 | V |
Characteristic Values
| Collector-emitter saturation voltage | IC = 50 A, VGE = 15 V Tvj = 25°C IC = 50 A, VGE = 15 V Tvj = 125°C IC = 50 A, VGE = 15 V Tvj = 150°C |
VCE sat | 1,85 2,15 2,25 |
2,15 | V VV |
|
| Gate threshold voltage | IC = 1,60 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,2 | 5,8 | 6,4 | V |
| Gate charge | VGE = -15 V ... +15 V | QG | 0,38 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 4,0 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 2,80 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 0,10 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 1.0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 100 | nA | ||
| Turn-on delay time, inductive load | IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C |
td on | 0,13 0,15 0,15 |
µs µs µs |
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| Rise time, inductive load | IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C |
tr | 0,02 0,03 0,035 |
µs µs µs |
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| Turn-off delay time, inductive load | IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C |
td off | 0,30 0,38 0,40 |
µs µs µs |
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| Fall time, inductive load | IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C |
tf | 0,045 0,08 0,09 |
µs µs µs |
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| Turn-on energy loss per pulse | IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 15 Ω Tvj = 150°C |
Eon | 4,50 6,50 7,50 |
19,0 30,0 36,0 |
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| Turn-off energy loss per pulse | IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 15 Ω Tvj = 150°C |
Eoff | 2,50 4,00 4,50 |
mJ mJ mJ |
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| SC data | VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C |
ISC | 180 | mJ mJ mJ |
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| Thermal resistance, junction to case | IGBT / per IGBT | RthJC | 0,53 | K/W | ||
| Thermal resistance, caseto heatsink | EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) |
RthCH | 0,082 | K/W | ||
| Temperature under switching conditions | Tvj op | -40 | 150 | °C |
