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| Brand Name: | Infineon |
| Model Number: | FF200R12KT4 |
| MOQ: | 1 set |
| Payment Terms: | T/T |
| Supply Ability: | 1000sets |
half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V |
| Continuous DC collector current | TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C |
IC nom IC |
200 320 |
A A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 400 | A |
| Total power dissipation |
TC = 25°C, Tvj max = 175°C |
Ptot | 1100 | W |
| Gate-emitter peak voltage | VGES | +/-20 | V |
Characteristic Values
| Collector-emitter saturation voltage |
IC = 200 A, VGE = 15 V Tvj = 25°C IC = 200 A, VGE = 15 V Tvj = 125°C |
VCE sat | 1,75 2,05 2,10 |
2,15 | V VV |
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| Gate threshold voltage | IC = 7,60 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,2 | 5,8 | 6,4 | V |
| Gate charge | VGE = -15 V ... +15 V | QG | 1,80 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 3,8 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 14,0 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 0,50 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 5,0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 400 | nA | ||
| Turn-on delay time, inductive load | IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C |
td on | 0,16 0,17 0,18 |
µs µs µs |
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| Rise time, inductive load | IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C |
tr | 0,045 0,04 0,50 |
µs µs µs |
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| Turn-off delay time, inductive load | IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C |
td off | 0,45 0,52 0,54 |
µs µs µs |
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| Fall time, inductive load | IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C |
tf | 0,10 0,16 0,16 |
µs µs µs |
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| Turn-on energy loss per pulse | IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C |
Eon | 10,0 15,0 17,0 |
19,0 30,0 36,0 |
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| Turn-off energy loss per pulse | IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 2,4 Ω Tvj = 150°C |
Eoff | 14,0 20,0 23,0 |
mJ mJ mJ |
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| SC data | VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C |
ISC | 800 | mJ mJ mJ |
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| Thermal resistance, junction to case | IGBT / per IGBT | RthJC | 0,135 | K/W | ||
| Thermal resistance, caseto heatsink | EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K) |
RthCH | 0,034 | K/W | ||
| Temperature under switching conditions | Tvj op | -40 | 150 |
°C
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