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| Brand Name: | Infineon |
| Model Number: | FF1500R12IE5 |
| MOQ: | 1 set |
| Payment Terms: | T/T |
| Supply Ability: | 1000sets |
PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 12
Potential Applications
• UPS systems
• High power converters
• Solar applications
• Motor drives
Electrical Features
• Tvj op = 175°C
• Extended operating temperature Tvj op
• Unbeatable robustness
• Trench IGBT 5
• High short-circuit capability
Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances
IGBT Inverter
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V |
| Continuous DC collector current | TC = 100°C, Tvj max = 175°C | IC nom | 1500 | A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 3000 | A |
| Gate-emitter peak voltage | VGES | +/-20 | V |
Characteristic Values min. typ. max.
| Collector-emitter saturation voltage | IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 175°C |
VCE sat | 1,70 2,00 2,15 |
2,15 2,45 2,60 |
VVV | |
| Gate threshold voltage | IC = 41,0 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,25 | 5,80 | 6,35 | V |
| Gate charge | VGE = -15 V ... +15 V, VCE = 600V | QG | 7,15 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 0,6 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 82,0 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 3,25 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 5,0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 400 | nA | ||
| Turn-on delay time, inductive load | IC = 1500 A, VCE = 600 V VGE = ±15 V RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
td on | 0,26 0,28 0,28 |
µs µs µs |
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| Rise time, inductive load | IC = 1500 A, VCE = 600 V VGE = ±15 V RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
tr | 0,16 0,17 0,18 |
µs µs µs |
||
| Turn-off delay time, inductive load | IC = 1500 A, VCE = 600 V VGE = ±15 V RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
td off | 0,51 0,56 0,59 |
µs µs µs |
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| Fall time, inductive load | IC = 1500 A, VCE = 600 V VGE = ±15 V RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
tf | 0,09 0,11 0,13 |
µs µs µs |
||
| Turn-on energy loss per pulse | IC = 1500 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 7900 A/µs (Tvj = 175°C) RGon = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
Eon | 120 180 215 |
mJ mJ mJ |
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| Turn-off energy loss per pulse | IC = 1500 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 2750 V/µs (Tvj = 175°C) RGoff = 0,82 Ω Tvj = 25°C Tvj = 125°C Tvj = 175°C |
Eoff | 155 195 220 |
mJ mJ mJ |
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| SC data | VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C |
ISC | 5600 | A | ||
| Thermal resistance, junction to case | Each IGBT / per IGBT | RthJC | 19,5 | K/kW | ||
| Thermal resistance, case to heatsink | each IGBT / per IGBT λPaste = 1 W/(m·K)/λgrease =1 W/(m·K) |
RthCH | 12,5 | K/kW | ||
| Temperature under switching conditions | Tvj op | -40 | 175 | °C |
