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Home ProductsIGBT Power Module

FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

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FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

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Large Image :  FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode Get Best Price

Product Details:
Place of Origin: China
Brand Name: Infineon
Model Number: FF1500R12IE5
Payment & Shipping Terms:
Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
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Detailed Product Description
VCES: 1200V IC Nom: 1500A
ICRM: 3000A Mechanical Features: Copper BasePlate
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IGBT power modules FP50R12KT4_B11 Infineon Technologies AG | Emitter Controlled 4 diode

 

Typical Applications
• Auxiliary Inverters
• Motor Drives
• Servo Drives


Electrical Features
• Low SwitchingLosses
• Tvj op = 150°C
• VCEsat withpositiveTemperature Coefficient
• Low VCEsat


Mechanical Features
• High Power and ThermalCycling Capability
• HighPower Density
• Integrated NTC temperaturesensor
• Copper BasePlate
• PressFIT Contact Technology
• Standard Housing

 

 

 

 

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Hontai Machinery and equipment (HK) Co. ltd

Tel: +8615920049965

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