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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

China 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series supplier

Large Image :  1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

Product Details:

Place of Origin: China
Brand Name: Infineon
Model Number: FF200R12KT4

Payment & Shipping Terms:

Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
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Detailed Product Description
VCES: 1200V IC Nom IC: 200A
IC: 320A ICRM: 400A

half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module

 

 

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC

200

320

A

A

Repetitive peak collector current tP = 1 ms ICRM 400 A
Total power dissipation

TC = 25°C,

Tvj max = 175°C

Ptot 1100 W
Gate-emitter peak voltage   VGES +/-20 V

 

 

Characteristic Values

Collector-emitter saturation voltage

IC = 200 A, VGE = 15 V Tvj = 25°C

IC = 200 A, VGE = 15 V Tvj = 125°C
IC = 200 A, VGE = 15 V Tvj = 150°C

VCE sat   1,75
2,05
2,10
2,15 V
VV
Gate threshold voltage IC = 7,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gate charge VGE = -15 V ... +15 V QG   1,80   µC
Internal gate resistor Tvj = 25°C RGint   3,8  
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies   14,0   nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres   0,50   nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES     5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES     400 nA
Turn-on delay time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C
td on   0,16 0,17
0,18
  µs
µs
µs
Rise time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C
tr   0,045 0,04
0,50
  µs
µs
µs
Turn-off delay time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C
td off   0,45 0,52
0,54
  µs
µs
µs
Fall time, inductive load IC = 200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C
tf   0,10 0,16
0,16
  µs
µs
µs
Turn-on energy loss per pulse IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,4 Ω Tvj = 150°C
Eon   10,0
15,0
17,0
  19,0
30,0
36,0
Turn-off energy loss per pulse IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,4 Ω Tvj = 150°C
Eoff   14,0
20,0
23,0
  mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C
ISC   800   mJ
mJ
mJ
Thermal resistance, junction to case IGBT / per IGBT RthJC     0,135 K/W
Thermal resistance, caseto heatsink EACH IGBT / per IGBT
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
RthCH   0,034   K/W
Temperature under switching conditions   Tvj op -40   150

°C

 

 

 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

 

1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

 

 

             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             
             

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