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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

China Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5 supplier

Large Image :  Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

Product Details:

Place of Origin: China
Brand Name: Infineon
Model Number: FF1200R12IE5

Payment & Shipping Terms:

Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
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Detailed Product Description
VCES: 1200V IC Nom: 1200A
ICRM: 2400A

Infineon Technologies Automotive IGBT Modules High power converters FF1200R12IE5 Motor drives

 

 

Typical Applications
• High power converters
• Motor drives
• UPS systems


Electrical Features
• Extended operating temperature Tvj op
• High short-circuit capability
• Unbeatable robustness
• Tvj op = 175°C
• Trench IGBT 5

 

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

 

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 80°C, Tvj max = 175°C IC nom 1200 A
Repetitive peak collector current tP = 1 ms ICRM 2400 A
Gate-emitter peak voltage   VGES +/-20 V

 

 

Characteristic Values min. typ. max.

Collector-emitter saturation voltage

IC = 1200 A, VGE = 15 V Tvj = 25°C

IC = 1200 A, VGE = 15 V Tvj = 125°C

IC = 1200 A, VGE = 15 V Tvj = 175°C

VCE sat  

1,70

2,00

2,15

2,15

2,45

2,60

VVV
Gate threshold voltage IC = 33,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,25 5,80 6,35 V
Gate charge VGE = -15 V ... +15 V, VCE = 600V QG   5,75   µC
Internal gate resistor Tvj = 25°C RGint   0,75  
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies   65,5   nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres   2,60   nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES     5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES     400 nA
Turn-on delay time, inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C
td on   0,20
0,23
0,25
  µs
µs
µs
Rise time,inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C
tr   0,16
0,17
0,18
  µs
µs
µs
Turn-off delay time, inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C
td off   0,48
0,52
0,55
  µs
µs
µs
Fall time,inductive load IC = 1200 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C
tf   0,08
0,11
0,13
  µs
µs
µs
Turn-on energy loss per pulse IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C
RGon = 0,82 Ω Tvj = 175°C
Eon   80,0
120
160
  mJ
mJ
mJ
Turn-off energy loss per pulse IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C
RGoff = 0,82 Ω Tvj = 175°C
Eoff   130
160
180
  mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C
ISC   4000   A
Thermal resistance, junction to case IGBT/per IGBT RthJC     28,7 K/kW
Thermal resistance,case to heat sink IGBT/per IGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH   22,1   K/kW
Temperature under switching conditions   Tvj op -40   175 °C

 

Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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