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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

China Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop supplier

Large Image :  Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

Product Details:

Place of Origin: China
Brand Name: Infineon
Model Number: FF50R12RT4

Payment & Shipping Terms:

Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
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Detailed Product Description
VCES: 1200V IC Nom: 50A
ICRM: 100A Applications: Motor Drives
Electrical Features: Low Switching Losses

Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled

 

  

 


 

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

 

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Tvj op = 150°C

• VCEsat with positive Temperature Coefficient

 

Mechanical Features

• Isolated Base Plate

• Standard Housing

 

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 50 A
Repetitive peak collector current tP = 1 ms ICRM 100 A
Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 285 W
Gate-emitter peak voltage   VGES +/-20 V

 

 

 

 

 

 

 

 

 

Characteristic Values

Collector-emitter saturation voltage IC = 50 A, VGE = 15 V Tvj = 25°C
IC = 50 A, VGE = 15 V Tvj = 125°C
IC = 50 A, VGE = 15 V Tvj = 150°C
VCE sat   1,85
2,15
2,25
2,15 V
VV
Gate threshold voltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gate charge VGE = -15 V ... +15 V QG   0,38   µC
Internal gate resistor Tvj = 25°C RGint   4,0  
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies   2,80   nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres   0,10   nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES     1.0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES     100 nA
Turn-on delay time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 15 Ω Tvj = 150°C
td on   0,13 0,15
0,15
  µs
µs
µs
Rise time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 15 Ω Tvj = 150°C
tr   0,02 0,03
0,035
  µs
µs
µs
Turn-off delay time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C
td off   0,30 0,38
0,40
  µs
µs
µs
Fall time, inductive load IC = 50 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C
tf   0,045 0,08
0,09
  µs
µs
µs
Turn-on energy loss per pulse IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 15 Ω Tvj = 150°C
Eon   4,50
6,50
7,50
  19,0
30,0
36,0
Turn-off energy loss per pulse IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 15 Ω Tvj = 150°C
Eoff   2,50
4,00
4,50
  mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C
ISC   180   mJ
mJ
mJ
Thermal resistance, junction to case IGBT / per IGBT RthJC     0,53 K/W
Thermal resistance, caseto heatsink EACH IGBT / per IGBT
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
RthCH   0,082   K/W
Temperature under switching conditions   Tvj op -40   150 °C

 

 

 

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