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Hontai Machinery and equipment (HK) Co. ltd

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C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines

China C- Series Half Bridge IGBT Module  ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines supplier

Large Image :  C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines

Product Details:

Place of Origin: China
Brand Name: Infineon
Model Number: FF450R12KT4

Payment & Shipping Terms:

Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
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Detailed Product Description
VCES: 1200V IC Nom: 450A
ICRM: 900A Applications: Motor Drives
Electrical Features: Low Switching Losses

half-bridge 62mm C-series 1200 V, 450 A dual IGBT modules FF450R12KT4 Wind Turbines

 

 

 

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

• Wind Turbines

 

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Unbeatable Robustness

• VCEsat with positive Temperature Coefficient

 

Mechanical Features

• 4 kV AC 1min Insulation

• Package with CTI > 400

• High Creepage and Clearance Distances

• High Power Density

• Isolated Base Plate

• Standard Housing

 

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current

TC = 100°C,

Tvj max = 175°C
TC = 25°C,

Tvj max = 175°C

IC nom
IC

450

580

A

A

Repetitive peak collector current tP = 1 ms ICRM 900 A
Total power dissipation

TC = 25°C,

Tvj max = 175°C

Ptot 2400 W
Gate-emitter peak voltage   VGES +/-20 V

 

 

Characteristic Values

Collector-emitter saturation voltage IC = 450 A, VGE = 15 V Tvj = 25°C
IC = 450 A, VGE = 15 V Tvj = 125°C
IC = 450 A, VGE = 15 V Tvj = 150°C
VCE sat   1,75
2,05
2,10
2,15 V
VV
Gate threshold voltage IC = 17,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gate charge VGE = -15 V ... +15 V QG   3,60   µC
Internal gate resistor Tvj = 25°C RGint   1,9  
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies   28,0   nF
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres   1,10   nF
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES     5,0 mA
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES     400 nA
Turn-on delay time, inductive load IC = 450 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 1,0 Ω Tvj = 150°C
td on   0,16 0,17
0,18
  µs
µs
µs
Rise time, inductive load IC = 450 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGon = 1,0 Ω Tvj = 150°C
tr   0,045 0,04
0,05
  µs
µs
µs
Turn-off delay time, inductive load IC = 450 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 1,0 Ω Tvj = 150°C
td off   0,45 0,52
0,54
  µs
µs
µs
Fall time, inductive load IC = 450 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj = 125°C
RGoff = 1,0 Ω Tvj = 150°C
tf   0,10 0,16
0,18
  µs
µs
µs
Turn-on energy loss per pulse IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,0 Ω Tvj = 150°C
Eon   19,0
30,0
36,0
  19,0
30,0
36,0
Turn-off energy loss per pulse IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C
VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1,0 Ω Tvj = 150°C
Eoff   26,0
40,0
43,0
  mJ
mJ
mJ
SC data VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C
ISC   1800   A
Thermal resistance, junction to case IGBT / per IGBT RthJC     0,062 K/W
Thermal resistance, caseto heatsink EACH IGBT / per IGBT
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
RthCH   0,03   K/W
Temperature under switching conditions   Tvj op -40   150 °C

 

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