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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5
Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

Large Image :  Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5 Get Best Price

Product Details:
Place of Origin: China
Brand Name: Infineon
Model Number: FF1500R12IE5
Payment & Shipping Terms:
Minimum Order Quantity: 1 set
Packaging Details: Wooden box packing
Delivery Time: 25 days after signing the contract
Payment Terms: T/T
Supply Ability: 1000sets
Detailed Product Description
VCES: 1200V IC Nom: 1500A
ICRM: 3000A Applications: Motor Drives
High Light:

high power igbt module

,

eupec igbt module

PrimePACK™3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 12 

 

 

 

Potential Applications
• UPS systems
• High power converters
• Solar applications
• Motor drives

 

Electrical Features
• Tvj op = 175°C
• Extended operating temperature Tvj op
• Unbeatable robustness
• Trench IGBT 5
• High short-circuit capability

 

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

 

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 1500 A
Repetitive peak collector current tP = 1 ms ICRM 3000 A
Gate-emitter peak voltage VGES +/-20 V  

 

 

 

Characteristic Values min. typ. max.

Collector-emitter saturation voltage IC = 1500 A, VGE = 15 V
IC = 1500 A, VGE = 15 V
IC = 1500 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
VCE sat 1,70
2,00
2,15
2,15
2,45
2,60
VVV
Gate threshold voltage IC = 41,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,25 5,80 6,35 V
Gate charge VGE = -15 V ... +15 V, VCE = 600V QG 7,15 µC    
Internal gate resistor Tvj = 25°C RGint 0,6    
Input capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 82,0 nF    
Reverse transfer capacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,25 nF    
Collector-emitter cut-off current VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA    
Gate-emitter leakage current VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA    
Turn-on delay time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
td on 0,26
0,28
0,28
µs
µs
µs
   
Rise time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
tr 0,16
0,17
0,18
µs
µs
µs
   
Turn-off delay time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
td off 0,51
0,56
0,59
µs
µs
µs
   
Fall time, inductive load IC = 1500 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
tf 0,09
0,11
0,13
µs
µs
µs
   
Turn-on energy loss per pulse IC = 1500 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 7900 A/µs (Tvj = 175°C)
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Eon 120
180
215
mJ
mJ
mJ
   
Turn-off energy loss per pulse IC = 1500 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 2750 V/µs (Tvj = 175°C)
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 175°C
Eoff 155
195
220
mJ
mJ
mJ
   
SC data VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C
ISC 5600 A    
Thermal resistance, junction to case Each IGBT / per IGBT RthJC 19,5 K/kW    
Thermal resistance, case to heatsink each IGBT / per IGBT
λPaste = 1 W/(m·K)/λgrease =1 W/(m·K)
RthCH 12,5 K/kW    
Temperature under switching conditions Tvj op -40 175 °C    

 

Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5 0

 

Contact Details
Hontai Machinery and equipment (HK) Co. ltd

Tel: +8615920049965

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